SM6020NSW datasheet(2/10 Pages) SINOPWER

2 / 10 page

SM6020NSW

www.sinopowersemi.com

Rev. A.1 - March, 2014

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (TA=25°C Unless Otherwise Noted)

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

±25

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

Diode Continuous Forward Current

TC=25°C

IDP

300μs Pulse Drain Current Tested

TC=25°C

300

TC=25°C

Continuous Drain Current

TC=100°C

TC=25°C

166

Maximum Power Dissipation

TC=100°C

RqJC

Thermal Resistance-Junction to Case

0.75

RqJA

Thermal Resistance-Junction to Ambient

62.5

°C/W

EAS

Avalanche Energy, Single Pulsed

450

Note a：Current limited by bond wire.

Note b：Starting TJ=25°C, L=1mH, IAS=30A, VDD=50V, VGS=10V

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250mA

VDS=48V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250mA

IGSS

Gate Leakage Current

VGS=±25V, VDS=0V

±100

RDS(ON)

Drain-Source On-state Resistance

VGS=10V, IDS=40A

3.7

4.5

Diode Characteristics

VSD

Diode Forward Voltage

ISD=20A, VGS=0V

0.8

1.3

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IDS=40A, dlSD/dt=100A/ms

SM6020NSW Datasheet(PDF) 2 Page - Sinopower Semiconductor Inc

SM6020NSW Datasheet(HTML) 2 Page - Sinopower Semiconductor Inc

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL