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IRF420 Datasheet(PDF) 3 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

Part # IRF420
Description  N-Channel Power MOSFETs
PDF  5 Pages
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Manufacturer  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
Direct Link  http://www.artschip.com/
Logo ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

IRF420 Datasheet(HTML) 3 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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IRF420-423/IRF820-823
MTP2N45/2N50
N-Channel Power MOSFETs
3.0A, 450V/500V
www.artschip.com
3
Electrical Characteristics (Cont.) (Tc=25℃ unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
Test Conditions
On characteristics
2.0
4.0
VGS(th)
Gate Threshold Voltage
IRF420-423/IRF820-823
MTP2N45/MTP2N50
2.0
4.5
V
ID=250µA, VDS=VGS
ID=1.0mA, VDS=VGS
3.0
4.0
RDS(on)
Static Drain-Source On-Resistance 2
IRF420/421/820/821
IRF422/423/822/823
MTP2N45/50
4.0
Ω
VGS=10V, ID=1.0A
10
VDS(on)
Drain-Source On-Voltage2
MTP2N45/50
8
V
V
VGS=10V; ID=2.0A
VGS=10V; ID=1.0A
Tc=100℃
gfs
Forward Transconductance
1.0
S( )
VDS=10V, ID=1.0A
Dynamic Characteristics
Ciss
Input Capacitance
400
pF
Coss
Output Capacitance
100
pF
Crss
Reverse Transfer Capacitance
40
pF
VDS=25V, VGS=0V
f=1.0MHz
Switching Characteristics (Tc=25℃, Figure 1,2)
3
td(on)
Turn-On Delay Time
40
ns
tr
Rise Time
50
ns
td(off)
Turn-Off Delay Time
60
ns
tf
Fall Time
60
ns
VDD=250V, ID=1.0A
VGS=10V, RGEN=50 Ω
RGS=50 Ω
Qg
Total Gate Charge
15
nC
VGS=10V, ID=3.0A
VDD=200V
Symbol
Characteristic
Typ
Max
Unit
Test Conditions
Source-Drain Diode Characteristics
1.4
V
Is=2.5A; VGS=0V
VSD
Diode Forward Voltage
1.3
V
Is=2.0A; VGS=0V
trr
Reverse Recovery Time
600
ns
Is=2.5A; dIs/dt=100A/µS
Notes
1.
TJ=+25℃ to +150℃
2.
Pulse width limited by TJ
3.
Switching time measurements performed on LEM TR-58 test equrpment.



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