MTP2N35 datasheet(1/5 Pages) ARTSCHIP

Part #	MTP2N35

Description	N-Channel Power MOSFETs

PDF	5 Pages

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Manufacturer	ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]

Direct Link	http://www.artschip.com/

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IRF710-713 / MTP2N35 / 2N40

N-Channel Power MOSFETs, 2.25 A, 350-400V

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1

Description

These devices are n-channel, enhancement mode, power

MOSFETs designed especially for high speed applications,

such as switching power supplies, converters, AC and DC

motor controls, relay and solenoid driver and high energy

pulse circuits.

Low RDS(on)

VGS Rated at ±20V

Silicon Gate for Fast Switching Speeds

IDSS, VDS(on), Specified at Elevated Temperature

Rugged

Low Drive Requirements

Ease of Paralleling

TO-220AB

IRF711

IRF712

IRF713

MTP2N35

MTP2N40

Maximum Ratings

Symbol

Characteristic

Rating

IRF710/712

MTP2N40

Rating

IRF711/713

MTP2N35

Unit

VDSS

Drain to Source Voltage

1

400

350

V

VDGR

Drain to Gate Voltage

1

RGS=20k Ω

400

350

V

VGS

Gate to Source Voltage

±20

V

TJ,Tsgt

Operating Junction and Storage

Temperatures

-55 to +150

℃

TL

Maximum Lead Temperature for

Soldering Purposes,

1/8” From Case for 5 s

275

℃

Maximum On-State Characteristics

IRF710-711

IRF712-713

NTP2N35/40

Unit

RDS(on)

Static Drain-to-Source

On Resistance

3.6

5.0

Ω

ID

Drain Current

Continuous at Tc=25℃

Continuous at Tc=100℃

Pulsed

1.5

1.0

6.0

1.4

0.9

5.0

1.3

0.8

5.0

A

Maximum On-State Characteristics

R ӨJC

Thermal Resistance

Junction to Case

6.4

2.5

℃

/W

R ӨJA

Thermal Resistance,

Junction to Ambient

80

℃

/W

PD

Total Power Dissipation

at Tc=25℃

20

50

W

Notes

For information concerning connection diagram and package outline, refer to

Section 7.

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MTP2N35 Datasheet(PDF) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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