Electronic Components Datasheet Search
  Indian  ▼
ALLDATASHEET.IN

X  

Preview PDF HTML

HM5N30PR Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Part # HM5N30PR
Description  Silicon N-Channel Power MOSFET
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Direct Link  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM5N30PR Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

  HM5N30PR Datasheet HTML 1Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM5N30PR Datasheet HTML 2Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM5N30PR Datasheet HTML 3Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM5N30PR Datasheet HTML 4Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM5N30PR Datasheet HTML 5Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM5N30PR Datasheet HTML 6Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM5N30PR Datasheet HTML 7Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM5N30PR Datasheet HTML 8Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM5N30PR Datasheet HTML 9Page - Shenzhen Huazhimei Semiconductor Co., Ltd Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250µA
300
--
--
V
Δ
BVDSS/ΔTJ Bvdss Temperature Coefficient
ID=250uA,Reference25℃
--
0.7
--
V/℃
VDS =300V, VGS= 0V,
Ta = 25℃
--
--
1
IDSS
Drain to Source Leakage Current
VDS =320V, VGS= 0V,
Ta = 125℃
10
µ
A
IGSS(F)
Gate to Source Forward Leakage
VDS =0V, VGS= 30V
--
--
100
nA
IGSS(R)
Gate to Source Reverse Leakage
VDS =0V,VGS =-30V
--
--
-100
nA
ON Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=1A
--
1.2
1.5
Ω
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
2.2
3.2
V
Pulse width tp≤380µs,δ≤2%
Dynamic Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
gfs
Forward Transconductance
VDS=15V, ID =1A
1
S
Ciss
Input Capacitance
--
139
Coss
Output Capacitance
--
21
Crss
Reverse Transfer Capacitance
VGS = 0V VDS = 25V
f = 1.0MHz
--
4.5
pF
Resistive Switching Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
td(ON)
Turn-on Delay Time
--
6
--
tr
Rise Time
--
7
--
td(OFF)
Turn-Off Delay Time
--
30
--
tf
Fall Time
ID =5.0A VDD = 200V
VGS = 10V RG = 25Ω
--
9
--
ns
Qg
Total Gate Charge
--
5
Qgs
Gate to Source Charge
--
0.9
Qgd
Gate to Drain (“Miller”)Charge
ID =5.0A VDD =200V
VGS = 10V
--
2.5
nC
Silicon N-Channel Power MOSFET
HM5N30PR
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com



Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com