Approval Sheet

Page 2 of 8

ASC_RFASWB643ATF09_V02

Apr. 2018

FEATURES



Low Insertion Loss

：0.45dB typ. @ 2.7GHz



High Isolation

：27dB typ. @ 2.7GHz



Low control voltage



Miniature footprint



Moisture Sensitive Level 3 (MSL3)

：



High ESD tolerance of 2kV HBM at all pins

Description



The RFASWB643ATF09 is a SOI (Silicon On Insulator) double pole double throw (DPDT) switch in a low cost miniature



The RFASWB643ATF09 is ideally suited for applications where high power, high linearity, low insertion loss, and small size

are required.



The RFASWB643ATF09 has ESD protection devices to achieve excellent ESD performances.

Application



2G/3G/4G multimode cellular handsets (LTE, UMTS, CDMA2000, EDGE, GSM, TDD-LTE, TD-SCDMA)

Block Diagram and Pin Out (Top View)

RF3

RF1

RF2

VDD

Bias

Decoder

RF4

1

2

3

4

5

6

7

8

9

10

11

12

Pin Names and Descriptions

Pin

Name

Description

Pin

Name

Description

1

VDD

DC power supply

7

RF1

RF path 1

2

N/C

No connected

8

N/C

No connected

3

Control voltage 1

9

RF4

RF path 4

4

GND

Ground

10

GND

Ground

5

RF2

RF path 2

11

path3

RF path 3

6

GND

Ground

12

GND

Ground