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IXTP32N65X Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTP32N65X Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IXTP32N65X · FEATURES · Drain Source Voltage- : VDSS= 650V(Min) · Static Drain-Source On-Resistance : RDS(on) ≤ 135mΩ@VGS= 10V · Fast Switching · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Easy to Mount · Space Savings · High Power Density · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 32 A IDM Drain Current-Single Plused 64 A PD Total Dissipation @TC=25℃ 500 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.25 ℃ /W |
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