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FTK4902DFN56 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK4902DFN56
Description  40V N-Channel MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4902DFN56 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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40V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
---
---
V
IDSS
Drain-Source Leakage Current
VDS=40V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=32V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=30A
---
1.7
2.2
mΩ
VGS=4.5V , ID=20A
‘---
2.1
3
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1
1.6
2.5
V
gfs
Forward Transconductance
VDS=10V , ID=10A
---
45
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3,4
VDS=20V , VGS=4.5V , ID=10A
---
70
140
nC
Qgs
Gate-Source Charge3,4
---
15
32
Qgd
Gate-Drain Charge3,4
---
40
80
Td(on)
Turn-On Delay Time3,4
VDD=20V , VGS=10V , RG=10Ω
ID=10A
---
24.6
48
ns
Tr
Rise Time3,4
---
62.8
120
Td(off)
Turn-Off Delay Time3,4
---
224
440
Tf
Fall Time3,4
---
162
320
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
8000
12000
pF
Coss
Output Capacitance
---
550
1000
Crss
Reverse Transfer Capacitance
---
420
800
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.2
2.4
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
140
A
ISM
Pulsed Source Current
---
---
280
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time
VGS=0V,IS=20A , di/dt=100A/µs
TJ=25℃
---
32
---
ns
Qrr
Reverse Recovery Charge
---
19
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=85A., Starting TJ=25℃
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
2019. 01. 28
2/5
Revision No : 0
FTK4902DFN56



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