Symbol

Parameter

Rating

Units

Drain-Source Voltage

40

V

Gate-Source Voltage

± 20

V

150

A

95

A

Drain Current – Pulsed

1

600

A

EAS

Single Pulse Avalanche Energy

2

312

mJ

IAS

Single Pulse Avalanche Current

2

79

A

166

W

Power Dissipation – Derate above 25℃

1.33

W/℃

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

62

℃/W

Thermal Resistance Junction to Case

---

0.75

℃/W

BVDSS

RDSON

ID

40V

3.8m

Ω

150A

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 40V, 150A, RDS(ON) =3.8m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 Green Device Available

General Description

Features

Applications

Thermal Characteristics

D

S

G

40V N-Channel MOSFETs

TO-220 Pin Configuration

1. Gate

2. Drain

3. Source

1

3

2

2020. 06. 05

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK4960P