AF8510C

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Nov 14, 2005

2/8

Absolute Maximum Ratings

Symbol

Parameter

N-Channel P-Channel

Units

Drain-Source Voltage

30

-30

Gate-Source Voltage

±20

±20

V

6.9

-5.3

5.5

-4.2

V

30

-30

A

Total Power Dissipation

2.0

W

Linear Deratomg Factor

0.016

W/ ºC

Operating Junction and Storage Temperature Range

-55 to 150

ºC

Thermal Data

Symbol

Parameter

Maximum

Units

Rthj-amb

Max.

62.5

ºC/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

30

-

-

V

BV

　

Breakdown Voltage Temperature

Coefficient

Reference to 25

-

0.02

-

V/

-

-

28

Static Drain-Source

-

-

40

mΩ

Gate Threshold Voltage

1

-

3

V

Forward Transconductance

-

4.6

-

S

Drain-Source Leakage Current

-

-

1

Drain-Source Leakage Current

-

-

25

uA

Gate-Source Leakage

-

-

±100

nA

-

10

16

Gate-Source Charge

-

2

-

Gate-Drain (“Miller”) Charge

-

6

-

nC

-

8

-

Rise Time

-

7

-

Turn-Off Delay Time

-

20

-

Fall-Time

-

6

-

ns

Input Capacitance

-

540

870

Output Capacitance

-

160

-

Reverse Transfer Capacitance

f=1.0MHz

-

120

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

-

-

1.2

V

Reverse Recovery Time

-

20

-

ns

Reverse Recovery Charge

dl/dt=100A/µs

-

11

-

nC