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HM20N50F Datasheet(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Part # HM20N50F
Description  500V N-Channel MOSFET
PDF  7 Pages
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Manufacturer  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Direct Link  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM20N50F Datasheet(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
10
-1
10
0
10
1
10
0
10
1
V
GS
Top:
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottom: 5.5V
Notes :
※
1. 250µs Pulse Test
2. T
C = 25℃
V
DS, Drain-Source Voltage [V]
024
68
10
10
-1
10
0
10
1
Notes :
※
1. V
DS = 50V
2. 250µ s Pulse Test
-55℃
150℃
25℃
V
GS , Gate-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
25℃
150℃
Notes :
※
1. V
GS = 0V
2. 250µ s Pulse Test
V
SD , Source-Drain Voltage [V]
0
1020
304050
6070
80
0.0
0.2
0.4
0.6
0.8
1.0
V
GS = 20V
V
GS = 10V
Note : T
※
J = 25℃
I
D, Drain Current [A]
0
10
2030
405060
7080
0
2
4
6
8
10
12
V
DS = 250V
V
DS = 100V
V
DS = 400V
? Note : I
D = 20 A
Q
G, Total Gate Charge [nC]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
? Notes :
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com



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