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LMAK13P06 Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LMAK13P06
Description  -60V P-Channel Enhancement Mode MOSFET
PDF  5 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LMAK13P06 Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Electrical Characteristics (TJ=25℃, unless otherwise noted)
Rev : 01.0 .2021
/
2 5
8
LMAK13P06
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-60
---
---
V
△
BVDSS/△TJ
BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.03
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V , ID=-3A
---
80
90
mΩ
VGS=-4.5V , ID=-2A
---
100
115
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1.2
-1.75
-2.5
V
IDSS
Drain-Source Leakage Current
VDS=-48V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=-48V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-3A
---
8.5
---
S
Qg
Total Gate Charge (-4.5V)
VDS=-48V , VGS=-4.5V , ID=-3A
---
12.1
---
nC
Qgs
Gate-Source Charge
---
2.2
---
Qgd
Gate-Drain Charge
---
6.3
---
Td(on)
Turn-On Delay Time
VDD=-15V , VGS=-10V ,
RG=3.3 ,
ID=-1A
---
9.2
---
ns
Tr
Rise Time
---
20.1
---
Td(off)
Turn-Off Delay Time
---
46.7
---
Tf
Fall Time
---
9.4
---
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
1137
---
pF
Coss
Output Capacitance
---
76
---
Crss
Reverse Transfer Capacitance
---
50
---
IS
Continuous Source Current1,5
VG=VD=0V , Force Current
---
---
-13
A
VSD
Diode Forward Voltage2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
Note :
1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3、The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,IAS =-24A
4、The power dissipation is limited by 150℃ junction temperature
5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.



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