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LMFB78N10A Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LMFB78N10A Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 6 page  Description The LMFB78N10A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =78A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP0178A LMFB78N10A TO-220-3L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 78 A Drain Current-Continuous(TC=100 ) ℃ ID (100℃) 60 A Pulsed Drain Current IDM 320 A Maximum Power Dissipation PD 125 W Derating factor 0.83 W/℃ Single pulse avalanche energy (Note 5) EAS 320 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ LMFB78N10A Super Trench Power MOSFET Rev : www.leiditech.com 01.06.2015 1/6 N-Channel |
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