LMPC150N10 datasheet(2/6 Pages) LEIDITECH

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Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 2)

RθJC

0.7

℃

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

100

Zero Gate Voltage Drain Current

IDSS

VDS=100V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

2.5

4.5

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=60A

3.7

4.5

mΩ

Forward Transconductance

gFS

VDS=10V,ID=60A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

7500

Output Capacitance

Coss

755

Reverse Transfer Capacitance

Crss

VDS=50V,VGS=0V,

F=1.0MHz

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=50V,ID=60A

VGS=10V,RG=4.7Ω

Total Gate Charge

100

Gate-Source Charge

Qgs

43.4

Gate-Drain Charge

Qgd

VDS=50V,ID=60A,

VGS=10V

19.7

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=135A

1.2

Diode Forward Current

(Note 2)

135

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = IS

di/dt = 100A/μs

(Note3)

144

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition : Tj=25 ,V

℃ DD=50V,VG=10V,L=0.5mH,Rg=25Ω

Rev :

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01.06.2017

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LMPC150N10

LMPC150N10 Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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