CMD314

DC-10 GHz Distributed Driver Amplifier

Data Sheet | July 29, 2021 | Subject to change without notice

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Applications Information

Assembly Guidelines

The backside of the CMD314 is RF ground. Die attach may be accomplished with either electrically and thermally

conductive epoxy or eutectic attach. Standard assembly procedures should be followed for high frequency devices. The

top surface of the semiconductor should be made planar to the adjacent RF transmission lines, and the RF decoupling

capacitors placed in close proximity to the DC connections on chip.

RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use of a 0.8 mil

thermosonic wedge bonding is highly recommended as the loop height will be minimized. The RF input and output require

a single bond wire as shown.

The semiconductor is 100 um thick and should be handled by the sides of the die or with a custom collet. Do not make

contact directly with the die surface as this will damage the monolithic circuitry. Handle with care.

Assembly Diagram

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be

observed during handling, assembly and test.