AG2104M8R datasheet(3/9 Pages) AITSEMI

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AiT Semiconductor Inc.

www.ait-ic.com

AG2104

MOSFET/IGBT GATE DRIVER

HALF-BRIDGE DRIVER

REV1.0

- NOV 2017 RELEASED -

- 3 -

ABSOLUTE MAXIMUM RATINGS

VB, High Side Floating Supply

-0.3V ~ 622V

VS, High Side Floating Supply Return

VB -22V ~ VB +0.3V

VHO, High Side Gate Drive Output

VS -0.3V ~ VB +0.3V

VCC, Low Side and Main Power Supply

-0.3V ~ 22V

VLO, Low Side Gate Drive Output

-0.3V ~ VCC +0.3V

VIN, Logic Input of IN & SD

-0.3V ~ VCC +0.3V

dVS/dt, Allowable Offset Supply Voltage Transient

50V/ns

ESD, HBM Model

2.5kV

ESD, Machine Model

200V

PD, Package Power Dissipation @ TA ≤25°C

SOP8

0.625W

RthJA, Thermal Resistance Junction to Ambient

SOP8

200℃/W

TJ, Junction Temperature

150℃

TS, Storage Temperature

-55℃~150℃

TL, Lead Temperature (Soldering, 10 seconds)

300℃

Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and

operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not

implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Min.

Max.

Units

High Side Floating Supply

VS +10

VS +20

High Side Floating Supply Return

600

High Side Gate Drive Output Voltage

VHO

Low Side Supply

VCC

Low Side Gate Drive Output Voltage

VLO

VCC

Logic Input Voltage(IN &

SD )

VIN

VCC

Ambient Temperature

-40

125

℃

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