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STL45N10F7AG Datasheet(PDF) 3 Page - STMicroelectronics |
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STL45N10F7AG Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() STL45N10F7AG Electrical ratings DocID030342 Rev 1 3/15 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at TC = 25 °C 18 A ID (1) Drain current (continuous) at TC = 100 °C 18 A IDM(2) Drain current (pulsed) 72 A PTOT Total dissipation at TC = 25 °C 72 W EAS(3) Single pulse avalanche energy 150 mJ TJ Operating junction temperature range -55 to 175 °C Tstg Storage temperature range Notes: (1)Limited by package. (2)Pulse width limited by safe operating area. (3)Starting Tj = 25 °C, ID = 9 A, VDD = 60 V Table 3: Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 2.08 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 31.3 °C/W Notes: (1)When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 s |
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