STW50N65DM6 datasheet(2/12 Pages) STMICROELECTRONICS

Part #	STW50N65DM6

Description	N-channel 650 V, 74 m typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 12 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM (1)

Drain current (pulsed)

120

PTOT

Total power dissipation at TC = 25 °C

250

dv/dt (2)

Peak diode recovery voltage slope

100

V/ns

di/dt (2)

Peak diode recovery current slope

1000

A/µs

dv/dt (3)

MOSFET dv/dt ruggedness

100

V/ns

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width limited by safe operating area

2. ISD ≤ 33 A, VDS (peak) < V(BR)DSS, VDD= 400V

3. VDS ≤ 520V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.5

°C/W

Rthj-amb

Thermal resistance junction-ambient

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

560

STW50N65DM6

Electrical ratings

DS13174 - Rev 2

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