DMC10H172SSD

Document number: DS43992 Rev. 2 - 2

2 of 10

www.diodes.com

March 2022

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DMC10H172SSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Q1

Q2

Units

Drain-Source Voltage

VDSS

100

-100

V

Gate-Source Voltage

VGSS

±20

±20

V

Continuous Drain Current (Note 6)

Q1: VGS = 10V

Q2: VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

ID

2.0

1.6

-1.7

-1.4

A

Maximum Body Diode Forward Current (Note 6)

IS

2.0

-1.7

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

16

-13

A

Avalanche Current, L = 1.43mH

IAS

5.3

-6

A

Avalanche Energy, L = 1.43mH

EAS

20

25

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

PD

1.1

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

110

°C/W

Total Power Dissipation (Note 6)

PD

1.5

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

80

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics N-Channel Q1 (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

100





V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS





1

µA

VDS = 100V, VGS = 0V

Gate-Source Leakage

IGSS





100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1



3

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)



103

160

m

Ω

VGS = 10V, ID = 1.6A



110

200

VGS = 4.5V, ID = 1.3A

Diode Forward Voltage

VSD



0.7

1.2

V

VGS = 0V, IS = 1.1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss



1145



pF

VDS = 50V, VGS = 0V

f = 1MHz

Output Capacitance

Coss



26



Reverse Transfer Capacitance

Crss



20



Gate Resistance

RG



1.3





VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg



9.6



nC



VDS = 50V, ID = 1A

Total Gate Charge (VGS = 10V)

Qg



19.6



Gate-Source Charge

Qgs



2.7



Gate-Drain Charge

Qgd



3.3



Turn-On Delay Time

tD(ON)



9



ns

VDS = 50V, VGS = 4.5V,

RG = 6.8Ω

ID = 1A

Turn-On Rise Time

tR



13



Turn-Off Delay Time

tD(OFF)



22



Turn-Off Fall Time

tF



7.5



Body Diode Reverse Recovery Time

tRR



19



ns

IF = 1A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR



14



nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.