PPJT7828

October 6,2016-REV.00

Page 2

Electrical Characteristics (TA=25

o

C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

BVDSS

VGS=0V,ID=250uA

30

-

-

V

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250uA

0.4

0.75

1.0

V

Drain-Source On-State Resistance

RDS(on)

VGS=4.5V,ID=300mA

-

0.7

1.2

Ω

VGS=2.5V,ID=200mA

-

0.8

1.6

VGS=1.8V,ID=100mA

-

0.9

2.0

VGS=1.5V,ID=50mA

-

1.1

3.0

VGS=1.2V,ID=20mA

-

1.5

4.0

Zero Gate Voltage Drain Current

IDSS

VDS=24V,VGS=0V

-

-

1

uA

Gate-Source Leakage Current

IGSS

VGS=+8V,VDS=0V

-

-

+10

uA

Dynamic

(Note 4)

Total Gate Charge

Qg

VDS=10V, ID=300mA,

VGS=4.5V

-

0.9

-

nC

Gate-Source Charge

Qgs

-

0.3

-

Gate-Drain Charge

Qgd

-

0.2

-

Input Capacitance

Ciss

VDS=10V, VGS=0V,

f=1.0MHZ

-

45

-

pF

Output Capacitance

Coss

-

14

-

Reverse Transfer Capacitance

Crss

-

0.8

-

Turn-On Delay Time

td(on)

VDD=10V, ID=300mA,

VGS=4V,

RG=10Ω

(Note 1,2)

-

8.3

-

ns

Turn-On Rise Time

tr

-

5.7

-

Turn-Off Delay Time

td(off)

-

35

-

Turn-Off Fall Time

tf

-

12

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

IS

---

-

-

300

mA

Diode Forward Voltage

VSD

IS=300mA, VGS=0V

-

0.9

1.3

V

NOTES :

1.

Pulse width<300us, Duty cycle<2%

2.

Essentially independent of operating temperature typical characteristics.

3.

RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is

defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper

4.

Guaranteed by design, not subject to production testing.