1 / 3 page
Silicon-Based Technology Corp.
Small-Signal Schottky Barrier Diodes
SBT10K45WS Series
SBT10K45WS series are Schottky Barrier Diodes fabricated by a series of
proprietary Schottky barrier patents and technologies (SBT
®) developed by
Silicon-Based
Technology
Corporation,
which
exhibit
high-performance
characteristics for modern switching, conversion and protection applications with
high speed and low power consumptions. The package types as described in this
data sheet are set forth in routine production; other packages are available upon
special orders.
Features and Advantages:
Low forward voltage drop(VF)
Low reverse leakage current (IR)
Very small conduction power loss
Very small switching power loss
Very high switching speed
Very high reliability
Electrical Characteristics : (@TA=25°C unless otherwise specified)
Characteristic
Symbol Min. Typ. Max. Unit
Test Conditions
Reverse Breakdown Voltage
(Note 2)
V(BR)R
45
-
-
-
IR=100 A
Forward Voltage (Note 2)
VFM
-
350
380
mV
IF=10mA
Reverse Current (Note 2)
IRM
-
0.07
0.5
A
VR=10V
Total Capacitance
CT
-
6.0
-
pF
VR=10V, f=1.0MHZ
SBT
Silicon-Based Technology Corporation
1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C
Tel 886-3-5777897
Fax 886-3-5779832
Indian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
