CMBT5401 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

Total power dissipation up to Tamb = 25°C

Ptot

max

250 mW

Junction temperature

max.

150 ° C

Storage temperature

Tstg

–55 to +150 ° C

THERMAL RESISTANCE

from junction to ambient

Rth j–a

500 K/W

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Collector cut–off current

IE = 0; –VCB = 120 V

–ICBO

max.

50 nA

IE = 0; –VCB = 120 V; Tamb = 150 °C

–ICBO

max.

µA

Breakdown voltages

IC = 1 mA; IB = 0

–V(BR)CEO min.

150 V

IC = 100 µA; IE = 0

–V(BR)CBO min.

160 V

IC = 0; IE = 10 µA–V(BR)EBO min.

5 V

Saturation voltages

–VCEsat

max.

0.2 V

–IC = 10 mA; –IB = 1 mA

–VBEsat

max.

1 V

–VCEsat

max.

0.5 V

–IC = 50 mA; –IB = 5 mA

–VBEsat

max.

1 V

D.C. current gain

IC = 1 mA; –VCE = 5 V

hFE

min.

IC = 10 mA; –VCE = 5 V

hFE

max.

240

IC = 50 mA; –VCE = 5 V

hFE

min.

Small–signal current gain

min.

IC = 1 mA; –VCE = 10 V; f = 1 kHz

hfe

max.

200

Output capacitance at f = 1 MHz

IE = 0; –VCB = 10 V

max.

6 pF

Transition frequency at f = 100 MHz

min.

100 MHz

–IC = 10 mA; –VCE = 10 V; Tamb = 25 °C

max.

300 MHz

Noise figure at RS = 10 Ω

IC = 200 µA; –VCE = 5 V

f = 10 Hz to 15.7 kHz; Tamb = 25 °C

max.

8 dB

CMBT5401

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