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IRFZ44VPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFZ44VPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRFZ44VPbF HEXFET® Power MOSFET 11/10/03 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 55 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 39 A IDM Pulsed Drain Current 220 PD @TC = 25°C Power Dissipation 115 W Linear Derating Factor 0.77 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 115 mJ IAR Avalanche Current 55 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.3 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance www.irf.com 1 VDSS = 60V RDS(on) = 16.5mΩ ID = 55A S D G TO-220AB Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Description PD - 94826 Lead-Free |
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