P0111MA datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

P011xx

Characteristics

3/9

Table 4.

Thermal resistance

Symbol

Parameter

Maximum

Unit

Rth(j-a)

Junction to case (DC)

TO-92

°C/W

Rth(j-t)

Junction to tab (DC)

SOT-223

°C/W

Rth(j-a)

Junction to ambient (DC)

TO-92

150

°C/W

S(1) = 5 cm2

SOT-223

S = Copper surface under tab.

Figure 1.

Maximum average power

dissipation versus average on-state

current

Figure 2.

Average and DC on-state current

versus lead temperature

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

P(W)

α = 180°

360°

(A)

T(AV)

100

125

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

(A)

T(AV)

(°C)

lead

α = 180° (SOT-223)

α = 180° (TO-92)

D.C. (SOT-223)

D.C. (TO-92)

Figure 3.

Average and DC on-state current

versus ambient temperature

Figure 4.

Relative variation of thermal

impedance junction to ambient

versus pulse duration

100

125

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

(A)

T(AV)

(°C)

amb

α = 180° (SOT-223)

α = 180° (TO-92)

D.C. (SOT-223)

D.C. (TO-92)

Device mounted on FR4 with

recommended pad layout

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.10

1.00

K=[Z

th(j-a)

th(j-a)]

t (s)

SOT-223

TO-92

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