Characteristics

P011xx

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1

Characteristics

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (180° conduction angle)

TO-92

Tl = 55 °C

0.8

A

SOT-223

Tamb = 70 °C

IT(AV)

Average on-state current (180° conduction angle)

TO-92

Tl = 55 °C

0.5

A

SOT-223

Tamb = 70 °C

ITSM

Non repetitive surge peak on-state current

tp = 8.3 ms

Tj = 25 °C

8

A

tp = 10 ms

7

I²tI²t Value for fusing

tp = 10 ms

Tj = 25 °C

0.24

A2S

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 60 Hz

Tj = 125 °C

50

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

1

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

0.1

W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Table 3.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

P0111

P0115

P0118

Unit

IGT

VD = 12 V

RL = 140 Ω

Min.

4

15

0.5

µA

Max.

25

50

5

VGT

Max.

0.8

V

VGD

VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ

Tj = 125 °C

Min.

0.1

V

VRG

IRG = 10 µA

Min.

8

V

IH

IT = 50 mA

RGK = 1 kΩ

Max.

5

mA

IL

IG = 1 mA

RGK = 1 kΩ

Max.

6

mA

dV/dt

VD = 67 % VDRM RGK = 1 kΩ

Tj = 125 °C

Min.

80

75

75

V/µs

VTM

ITM = 1.6 A tp = 380 µs

Tj = 25 °C

Max.

1.95

V

Vt0

Threshold voltage

Tj = 125 °C

Max.

0.95

V

Rd

Dynamic resistance

Tj = 125 °C

Max.

600

m

Ω

IDRM

IRRM

VDRM = VRRM = 400 V RGK = 1 kΩ

Tj = 25 °C

Max.

1

µA

VDRM = VRRM = 600 V RGK = 1 kΩ

10

VDRM = VRRM

RGK = 1 kΩ

Tj = 125 °C

100