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D2V5F4U8MR Datasheet(PDF) 2 Page - Diodes Incorporated |
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D2V5F4U8MR Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page ![]() D2V5F4U8MR Document number: DS43659 Rev. 2 - 2 2 of 5 www.diodes.com November 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. D2V5F4U8MR Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation PPP 1000 W 8/20µs, per Figure 1 Peak Pulse Current IPP 80 A 8/20µs, per Figure 1 ESD Protection – Contact Discharge VESD_Contact ±8 kV IEC 61000-4-2 Standard ESD Protection – Air Discharge VESD_Air ±15 kV IEC 61000-4-2 Standard Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) PD 500 mW Thermal Resistance, Junction to Ambient (Note 5) RJA 50.12 C/W Operating Temperature Range TJ -55 to +125 C Storage Temperature Range TSTG -55 to +150 C Soldering Temperature, t max = 10s TL +260 C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage VRWM — — 2.5 V — Channel Leakage Current (Note 6) IRM — — 1 µA VRWM = 2.5V Punch Through Voltage VPT 2.7 — — V IPT = 2µA Snap-Back Voltage VSB 2.5 — — ISB = 50mA Clamping Voltage, Positive Transients VCL — — 5 V IPP = 1A, tp = 8/20μs, Figure 1 — — 17 IPP = 48A, tp = 8/20μs, Figure 1 — — 20 IPP = 80A, tp = 8/20μs, Figure 1 Channel Input Capacitance CT — 2.1 3 pF VR = 0V, f = 1MHz, each line Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on our website at http://www.diodes.com/package-outlines.html. 6. Short duration pulse test used to minimize self-heating effect. 80 40 20 0 t, TIME ( 祍 ) Figure 1 Pulse Waveform 100 50 0 t = 8 祍 r Peak Value I PP Half Value I PP/2 8x20 Waveform as defined by R.E.A. tp -10 0 10 20 30 40 50 60 70 80 90 100 TIME (ns) Figure 2 ESD Discharge Current Wave Form IEC 6100-4-2 (330 /150pF) Rise time = 0.7ns to 1ns 0 20 40 60 80 100 120 27 53 ( μs) 8 μs IEC 61000-4-2 tr, Figure 1. Figure 2. |
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