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D2V5F4U8MR Datasheet(PDF) 2 Page - Diodes Incorporated

Part # D2V5F4U8MR
Description  ESD PROTECTION DIODES
PDF  5 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

D2V5F4U8MR Datasheet(HTML) 2 Page - Diodes Incorporated

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D2V5F4U8MR
Document number: DS43659 Rev. 2 - 2
2 of 5
www.diodes.com
November 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
D2V5F4U8MR
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Conditions
Peak Pulse Power Dissipation
PPP
1000
W
8/20µs, per Figure 1
Peak Pulse Current
IPP
80
A
8/20µs, per Figure 1
ESD Protection
– Contact Discharge
VESD_Contact
±8
kV
IEC 61000-4-2 Standard
ESD Protection
– Air Discharge
VESD_Air
±15
kV
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Package Power Dissipation (Note 5)
PD
500
mW
Thermal Resistance, Junction to Ambient (Note 5)
RJA
50.12
C/W
Operating Temperature Range
TJ
-55 to +125
C
Storage Temperature Range
TSTG
-55 to +150
C
Soldering Temperature, t max = 10s
TL
+260
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Standoff Voltage
VRWM
2.5
V
Channel Leakage Current (Note 6)
IRM
1
µA
VRWM = 2.5V
Punch Through Voltage
VPT
2.7
V
IPT = 2µA
Snap-Back Voltage
VSB
2.5
ISB = 50mA
Clamping Voltage, Positive Transients
VCL
5
V
IPP = 1A, tp = 8/20μs, Figure 1
17
IPP = 48A, tp = 8/20μs, Figure 1
20
IPP = 80A, tp = 8/20μs, Figure 1
Channel Input Capacitance
CT
2.1
3
pF
VR = 0V, f = 1MHz, each line
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on our website at http://www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
80
40
20
0
t, TIME (
祍 )
Figure 1 Pulse Waveform
100
50
0
t = 8
r
Peak Value I
PP
Half Value I
PP/2
8x20 Waveform
as defined by R.E.A.
tp
-10
0
10
20 30
40
50
60
70
80
90 100
TIME (ns)
Figure 2 ESD Discharge Current Wave Form
IEC 6100-4-2 (330 /150pF)
Rise time = 0.7ns to 1ns
0
20
40
60
80
100
120
27
53
(
μs)
8
μs
IEC 61000-4-2
tr,
Figure 1.
Figure 2.



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