CEP35P10/CEB35P10

CEF35P10

Electrical Characteristics TA = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

76

63

-1

-3

-100

100

-1

mΩ

V

nA

nA

µ

A

V

2

Gate Body Leakage Current, Reverse

On Characteristics c

Dynamic Characteristics d

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics d

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current b

Drain-Source Diode Forward Voltage c

Test Condition

VGS = 0V, ID = -250µA

VGS(th)

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

IS

VSD

Typ

Max

-100

VDS = -100V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = -250µA

VGS = -10V, ID = -16A

VGS = -4.5V, ID = -8A

VDD = -50V, ID = -18A,

VGS = -10V, RGEN= 3.3Ω

VDS = -80V, ID = -18A,

VGS = -10V

VDS = -25V, VGS = 0V,

f = 1.0 MHz

VGS = 0V, IS = -16A

2590

320

45

17

6

75

10

75

9

18

-32

-1.2

92

72

mΩ

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

5

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Surface Mounted on FR4 Board, t < 10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.

e.L = 1mH, IAS =30A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C.