M58LR128HT datasheet(1/112 Pages) STMICROELECTRONICS

Part #	M58LR128HT

Description	128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories

PDF	112 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 112 page

February 2007

Rev 1

1/112

1

M58LR128HT

M58LR128HB

128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst)

1.8 V supply Flash memories

Features

■

Supply voltage

–VDD = 1.7 V to 2.0 V for program, erase and

read

–VDDQ = 1.7 V to 2.0 V for I/O Buffers

–VPP = 9 V for fast program

■

Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 54 MHz

– Asynchronous Page Read mode

– Random access: 85 ns

■

Synchronous Burst Read Suspend

■

Programming time

– 2.5 µs typical word program time using

Buffer Enhanced Factory Program

command

■

Memory organization

– Multiple Bank memory array: 8 Mbit banks

– Parameter Blocks (top or bottom location)

■

Dual operations

– program/erase in one Bank while read in

others

– No delay between read and write

operations

■

Block locking

– All blocks locked at power-up

– Any combination of blocks can be locked

with zero latency

–WP for Block Lock-Down

– Absolute Write Protection with VPP = VSS

■

Security

– 64 bit unique device number

– 2112 bit user programmable OTP Cells

■

Common Flash Interface (CFI)

■

100 000 program/erase cycles per block

■

Electronic signature

– Manufacturer code: 20h

– Top device codes:

M58LR128HT: 88C4h

– Bottom device codes

M58LR128HB: 88C5h

■

VFBGA56 package

– ECOPACK® compliant

VFBGA56 (ZB) 7.7 × 9 mm

FBGA

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