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SS32BG Datasheet(PDF) 2 Page - UN Semiconducctor INC |
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SS32BG Datasheet(HTML) 2 Page - UN Semiconducctor INC |
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2 / 4 page ![]() ROHS Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. 2/3 SS32BG~SS320BG Surface Mount Schottky Barrier Rectifier Electrical Characteristics Curves Fig. 2 Typical Reverse Characteristics Fig.1 Forward Current Derating Curve Fig. 4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig. 6 Typical Transient Thermal Impedance 0.6 1.2 1.8 2.4 3.0 3.5 0 0 25 50 75 100 125 150 Case Temperature (°C) 20 40 60 80 0 T =25 J ° C T =100 J ° C Percent of Rated Peak Reverse Voltage(%) 100 100 101 102 103 104 T =75 J ° C SS32BG~ SS36BG SS38BG~ SS320BG 0.1 0 0.4 1.4 Instaneous Forward Voltage (V) 1.0 10 0.6 0.2 0.8 1.0 1.2 1.8 1.6 SS32BG/SS34BG SS36BG /SS38BG SS310BG/SS312BG SS315BG/SS320BG 20 Reverse Voltage (V) 10 0.1 10 100 500 20 100 1 1000 T =25 J ° C 200 SS32BG~ SS36BG SS38BG~ SS320BG 10 100 1 30 40 50 20 60 80 70 Number of Cycles at 60Hz 90 8.3 ms Single Half Sine Wave (JEDEC Method) 0.01 100 1 10 100 t, Pulse Duration(sec) 0.1 1 10 |
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