1

ISC032N12LM6

Rev.2.0,2023-10-12

Final Data Sheet

1

2

3

4

5

6

7

8

4

3

2

1

5

6

7

8

TDSON-8FL(enlargedsourceinterconnection)

Drain

Pin 5-8

Gate

Pin 4

Source

Pin 1-3

*1

*1: Internal body diode

MOSFET

OptiMOSTM6Power-Transistor,120V

Features

•N-channel,logiclevel

•Verylowon-resistanceRDS(on)

•ExcellentgatechargexRDS(on)product(FOM)

•Verylowreverserecoverycharge(Qrr)

•Highavalancheenergyrating

•175°Coperatingtemperature

•Optimizedforhighfrequencyswitchingandsynchronousrectification

•Pb-freeleadplating;RoHScompliant

•Halogen-freeaccordingtoIEC61249-2-21

•MSL1classifiedaccordingtoJ-STD-020

Productvalidation

FullyqualifiedaccordingtoJEDECforIndustrialApplications

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS

120

V

RDS(on),max

3.2

m

Ω

ID

170

A

Qoss

111

nC

QG(0V...4.5V)

33

nC

Qrr(1000A/µs)

217.3

nC

Type/OrderingCode

Package

Marking

RelatedLinks

ISC032N12LM6

PG-TDSON-8 FL

032N12L6

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