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B2M080120R Datasheet(PDF) 3 Page - BASIC SEMICONDUCTOR

Part # B2M080120R
Description  SiC MOSFET
PDF  14 Pages
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Manufacturer  BASICSEMI [BASIC SEMICONDUCTOR]
Direct Link  https://www.basicsemi.com/
Logo BASICSEMI - BASIC SEMICONDUCTOR

B2M080120R Datasheet(HTML) 3 Page - BASIC SEMICONDUCTOR

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Thermal Characteritics
Symbol
Parameter
Value
Unit
Min.
Typ.
Max.
0.91
1.20
K/W
Thermal Resistance from Junction to Case
R
th(jc)
AC Characteristics
Gate Charge Characteristics
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
1010
60
4
3.5
pF
pF
pF
24
μJ
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
C
iss
C
oss
C
rss
R
G(int)
V
GS=0V, VDS=800V
f =1MHz, V
AC=25mV
f =1MHz, V
AC=25mV
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
15
26
46
nC
nC
nC
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
Q
GS
Q
GD
Q
G
V
DS =800V
I
D
=20A
V
GS=-4/+18V
C
oss Stored Energy
E
oss
76
pF
Effective Output Capacitance,
Energy Related
C
O(ER)
V
GS=0V, 0V < VDS < 800V
110
pF
Effective Output Capacitance,
Time Related
C
O(TR)
V
GS=0V, 0V < VDS < 800V
Rev. 0.0
B2M080120R



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