© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 6

1

Publication Order Number:

MMBT2222LT1/D

MMBT2222LT1,

MMBT2222ALT1

MMBT2222ALT1 is a Preferred Device

General Purpose Transistors

NPN Silicon

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector −Emitter Voltage

MMBT2222LT1

MMBT2222ALT1

30

40

Vdc

Collector −Base Voltage

MMBT2222LT1

MMBT2222ALT1

60

75

Vdc

Emitter −Base Voltage

MMBT2222LT1

MMBT2222ALT1

5.0

6.0

Vdc

Collector Current − Continuous

600

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage Temperature Range

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR− 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

SOT−23

CASE 318

STYLE 6

Preferred devices are recommended choices for future use

and best overall value.

MARKING DIAGRAM

xxx = 1P or M1B

M

= Date Code*

G

= Pb−Free Package

COLLECTOR

3

1

BASE

2

EMITTER

http://onsemi.com

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

1

2

1

3

xxx M

G

G