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IXFN110N85X Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFN110N85X Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISFM1276 eq IXFN110N85X N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 110A@ TC=25℃ · Drain Source Voltage -VDSS= 850V(Min) · Static Drain-Source On-Resistance -RDS(on) = 33mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · AC and DC Motor Drives · Power Factor Correction (PFC) Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 850 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 110 A IDM Drain Current-Single Pulse 220 A PD Total Dissipation @TC=25℃ 1170 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.11 ℃ /W D G S S SOT-227 package |
Similar Part No. - IXFN110N85X |
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