TIP101 datasheet(2/6 Pages) POINN

2 / 6 page

TIP100, TIP101, TIP102

NPN SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC = 30 mA

(see Note 5)

IB = 0

TIP100

TIP101

TIP102

100

ICEO

Collector-emitter

cut-off current

VCE = 30 V

VCE = 40 V

VCE = 50 V

IB = 0

TIP100

TIP101

TIP102

µA

ICBO

Collector cut-off

current

VCB = 60 V

VCB = 80 V

VCB = 100 V

IE = 0

TIP100

TIP101

TIP102

µA

IEBO

Emitter cut-off

current

VEB =

5 V

IC = 0

hFE

Forward current

transfer ratio

VCE =

4 V

VCE =

4 V

IC = 3 A

IC = 8 A

(see Notes 5 and 6)

1000

200

20000

VCE(sat)

Collector-emitter

saturation voltage

IB =

6 mA

IB = 80 mA

IC = 3 A

IC = 8 A

(see Notes 5 and 6)

2.5

VBE

Base-emitter

voltage

VCE =

4 V

IC = 8 A

(see Notes 5 and 6)

2.8

VEC

Parallel diode

forward voltage

IE =

8 A

IB = 0

(see Notes 5 and 6)

3.5

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

1.56

°C/W

RθJA

Junction to free air thermal resistance

62.5

°C/W

CθC

Thermal capacitance of case

0.9

J/°C

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

†

MIN

TYP

MAX

UNIT

Delay time

IC = 8 A

VBE(off) = -5 V

IB(on) = 80 mA

RL = 5 Ω

IB(off) = -80 mA

tp = 20 µs, dc ≤ 2%

Rise time

350

Storage time

1.8

µs

Fall time

2.45

µs

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