PAGE . 4

STAD-JUN.11.2007

PJB75N75

Fig.11 - Maximum Drain Current vs Junction Temperature

Fig.8 - Threshold Voltage vs Junction Temperature

Fig.7 - Gate Charge

Fig.9 - Breakdown Voltage vs Junction Temperature

Fig.10 - Source-Drain Diode Forward Voltage

0

2

4

6

8

10

0

1020

30405060

708090

V =30V

I =30A

DS

D

0.1

1

10

100

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

T =125 C

J

O

T =25 C

J

O

T =-55 C

J

O

V =0V

GS

0.7

0.8

0.9

1.0

1.1

1.2

-50

-25

0

25

50

75

100

125

150

I =250uA

D

0.9

0.95

1

1.05

1.1

1.15

1.2

-50

-25

0

25

50

75

100 125

150

I =250uA

D

0

10

20

30

40

50

60

70

80

90

100

25

50

75

100

125

150

Limited by Package

Fig.12 - Safe Operation Area

0.1

1

10

100

1000

0.1

1

10

100

1000

10ms

100us

1ms

DC

Rds(on) Limited

LEGAL STATEMENT

Copyright PanJit International, Inc 200

7

The information presented in this document is believed to be accurate and reliable. The specifications and information

herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the

suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or

systems. Pan Jit does not convey any license under its patent rights or rights of others.