AO4619 datasheet(2/7 Pages) AOSMD

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AO4619

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

100

VGS(th)

1.62

ID(ON)

TJ=125°C

Ω

gFS

VSD

0.74

2.5

Ciss

621

820

Coss

118

Crss

0.8

1.5

Ω

Qg(10V)

11.3

Qg(4.5V)

5.7

Qgs

2.1

Qgd

3nC

tD(on)

4.5

3.1

tD(off)

15.1

2.7

trr

15.5

Qrr

7.1

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS=10V, VDS=15V, ID=7.4A

Total Gate Charge

Gate Drain Charge

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=2Ω,

RGEN=3Ω

Turn-Off Fall Time

Total Gate Charge

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Ω

VGS=4.5V, ID=6A

IS=1A,VGS=0V

VDS=5V, ID=7.4A

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=250µA

VDS=24V, VGS=0V

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

N-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=7.4A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=4.5V, VDS=5V

VGS=10V, ID=7.4A

Reverse Transfer Capacitance

IF=7.4A, dI/dt=100A/µs

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t≤ 10s thermal resistance rating.

Rev 0: Oct 2006

Alpha & Omega Semiconductor, Ltd.

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