ISF1318 datasheet(2/3 Pages) ISC

2 / 3 page

isc N-Channel MOSFET Transistor

ISF1318

www.iscsemi.com

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0, ID= 0.25mA

120

IDSS

Zero Gate Voltage Drain Current

VDS= 120V, VGS= 0V

1.0

IGSS

Gate-Body Leakage Current

VGS= ±20V, VDS= 0V

100

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= 0.25mA

2.0

4.0

RDS(on)

Drain-Source On-Resistance

VGS= 10V, ID= 20A

mΩ

Ciss

Input Capacitance

VGS = 0V,

VDS = 60V,

f = 1.0MHz

1394

Coss

Output Capacitance

480

Crss

Reverse Transfer Capacitance

Total Gate Charge

VDS =60V,

ID = 20A,

VGS = 10V

Qgs

Gate-Source Charge

7.5

Qgd

Gate-Drain Charge

2.0

td(on)

Turn-on Delay Time

VDS = 60V,

VGS = 10V,

ID = 20A,

RG = 2.2Ω

16.5

Turn-on Rise Time

td(off)

Turn-off Delay Time

Turn-off Fall Time

5.6

Drain - Source Body Diode Characteristics

ISD

Continuous Source Current

Tc = 25 ºC

VSD

Diode Forward Voltage

ISD= 30A, VGS= 0V

1.2

trr

Reverse Recovery Time

IF = 20A,

diF/dt = 100A /μs

Qrr

Reverse Recovery Charge

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