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ISF1329 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISF1329 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1329 eq IPA60R120P7 N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 26A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.12Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC) Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 26 A IDM Drain Current-Single Pulse 78 A PD Total Dissipation @TC=25℃ 28 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.49 ℃ /W 12 3 TO-220F package Pin 1.Gate 2.Drain 3.Source |
Similar Part No. - ISF1329 |
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Similar Description - ISF1329 |
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