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BU807 Datasheet(PDF) 1 Page - STMicroelectronics |
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BU807 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s NPN DARLINGTONS s LOW BASE-DRIVE REQUIREMENTS s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION s HORIZONTAL DEFLECTION FOR MONOCHROME TVs DESCRIPTION The devices are silicon Epitaxial Planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. They can be used in horizontal output stages of 110 oCRT video displays. INTERNAL SCHEMATIC DIAGRAM October 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BU806 BU807 VCBO Collector-base Voltage (IE = 0) 400 330 V VCEV Collector-emitter Voltage (VBE = -6V) 400 330 V VCEO Collector-emitter Voltage (IB = 0) 200 150 V VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 8 A ICM Collector Peak Current 15 A IDM Damper Diode Peak Forward Current 10 A IB Base Current 2 A Ptot Total Power Dissipation at Tcase < 25 oC 60 W Tstg Storage Temperature -65 to 150 oC Tj Max Operating Junction Temperature 150 oC 1 2 3 TO-220 ® 1/4 |
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