STPS30L60CG datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Characteristics

STPS30L60C

4/13

Doc ID 6479 Rev 10

Figure 6.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 7.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAB)

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Z/R

th(j-c)

t (s)

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

TO-220AB, TO-220 narrow leads

TO-247, D2PAK, I2PAK

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

δ=0.1

δ=0.2

δ=0.5

Single pulse

δ=tp/T

Z/R

th(j-c)

t (s)

Figure 8.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 9.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

10 15 20 25 30 35 40 45 50 55 60

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

I (mA)

Tj=125°C

Tj=25°C

Tj=150°C

Tj=100°C

Tj=75°C

Tj=50°C

V (V)

100

0.1

0.2

0.5

1.0

2.0

C(nF)

F=1MHz

Tj=25°C

VR(V)

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