Characteristics

STPS1045B

2/8

DocID6085 Rev 9

1

Characteristics

To evaluate the conduction losses, use the following equation:

P = 0.42 x IF(AV) + 0.015 x IF

2

(RMS)

Table 2. Absolute ratings (limiting values, at 25 °C unless otherwise stated)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

45

V

IF(RMS) / pin Forward rms current

7

A

IF(AV)

Average forward current,

δ 0.5, square wave

Tc = 150 °C

10

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

75

A

PARM

Repetitive peak avalanche power

tp = 10 s, Tj = 125 °C

285

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

1.

condition to avoid thermal runaway for a diode on its own heatsink

175

°C

Table 3. Thermal resistance

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

3

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR

(1)

1.

Pulse test: tp = 5 ms,  < 2%

Reverse leakage current

Tj = 25 °C

VR = VRRM

-100

A

Tj = 125 °C

-

7

15

mA

VF

(2)

2.

Pulse test: tp = 380 µs,  < 2%

Forward voltage drop

Tj = 25 °C

IF = 10 A

-0.63

V

Tj = 125 °C

-

0.50

0.57

Tj = 25 °C

IF = 20 A

-0.84

Tj = 125 °C

-

0.65

0.72

dPtot

dTj

<

1

Rth(j-a)