General Purpose Transistor

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Max

Unit

Collector-base breakdown voltage

50

IC = 10μAdc, IE = 0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

IC = 1mAdc, IB = 0

IE = 10μAdc, IC = 0

VCE = 30Vdc, VEB = 3Vdc

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICEX

60

40

6

Vdc

Vdc

Vdc

nAdc

50

VCB = 60Vdc, IE = 0

ICBO

nAdc

DC current gain

VCE = 1Vdc, IC = 0.1mAdc

VCE = 1Vdc, IC = 1mAdc

hFE(1)

hFE(2)

300

40

70

VCE = 1Vdc, IC = 10mAdc

hFE(3)

VCE = 1Vdc, IC = 50mAdc

hFE(4)

100

60

Collector-emitter saturation voltage

IC = 50mAdc, IB = 5mAdc

VCE(sat)

0.2

Vdc

0.3

IC = 10mAdc, IB = 1mAdc

hFE(5)

VCE = 1Vdc, IC = 100mAdc

30

VCB = 5Vdc, f = 1MHZ, IE = 0

Cobo

4.0

pF

Delay time

Storage time

Rise time

Fall time

VCC = 3Vdc, VBE = 0.5Vdc,

IC = 10mAdc, IB1 = 1mAdc

VCC = 3Vdc, IC = 10mAdc,

td

tr

ts

tf

35

35

200

50

ns

ns

ns

ns

Base-emitter saturation voltage

IC = 50mAdc, IB = 5mAdc

VBE(sat)

0.95

Vdc

IC = 10mAdc, IB = 1mAdc

0.85

0.65

Input capacitance

Output capacitance

8.0

pF

Cibo

VEB = 0.5Vdc, f = 1MHZ, IC = 0

IB1 = IB2 = 1mAdc

AQW-JTR21

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Collector cut-off current