General Purpose Transistor

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Max

Unit

Collector-base breakdown voltage

IC = -10μAdc, IE = 0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

IC = -1mAdc, IB = 0

IE = -10μAdc, IC = 0

V(BR)CBO

V(BR)CEO

V(BR)EBO

-40

-40

-5

Vdc

Vdc

Vdc

µAdc

-0.1

VCB = -40Vdc, IE = 0

ICBO

-0.1

Emitter cut-off current

VCB = -5Vdc, IE = 0

IEBO

µAdc

DC current gain

VCE = -1Vdc, IC = -0.1mAdc

VCE = -1Vdc, IC = -1mAdc

hFE(1)

hFE(2)

300

40

70

VCE = -1Vdc, IC = -10mAdc

hFE(3)

VCE = -1Vdc, IC = -50mAdc

hFE(4)

100

60

Collector-emitter saturation voltage

IC = -50mAdc, IB = -5mAdc

VCE(sat)

-0.25

Vdc

-0.4

IC = -10mAdc, IB = -1mAdc

hFE(5)

VCE = -1Vdc, IC = -100mAdc

30

VCB = -5Vdc, f = 1MHZ, IE = 0

Cobo

4.5

pF

Delay time

Storage time

Rise time

Fall time

VCC = -3Vdc, VBE = -0.5Vdc,

IC = -10mAdc, IB1 = -1mAdc

VCC = -3Vdc, IC = -10mAdc,

td

tr

ts

tf

35

35

225

75

ns

ns

ns

ns

Base-emitter saturation voltage

IC = -50mAdc, IB = -5mAdc

VBE(sat)

-0.95

Vdc

IC = -10mAdc, IB = -1mAdc

-0.85

-0.65

Input capacitance

Output capacitance

10

pF

Cibo

VEB = -5Vdc, f = 1MHZ, IC = 0

IB1 = IB2 = -1mAdc

AQW-JTR22

Page 2

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Comchip Technology CO., LTD.

Collector cut-off current

Collector cut-off current

-50

VCE = -30Vdc, VEB = -3Vdc

ICEX

nAdc