Electrical Characteristics (at Ta=25°C unless otherwise noted)

Page 2

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Comchip Technology CO., LTD.

REV:A

General Purpose Transistor

Symbol

Parameter

Conditions

Min

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

IC = -100μA, IE = 0

IC = -1mA, IB = 0

IE = -10μA, IC = 0

IE = 0, VCB = -120V

IC = 0, VEB = -3V

VCE = -5V, IC = -1mA

VCE = -5V, IC = -10mA

VCE = -5V, IC = -50mA

IC = -10mA, IB = -1mA

IC = -10mA, IB = -1mA

IC = -10mA, VCE = -10V, f = 100MHz

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VBE(sat)

fT

-160

-150

-5

50

100

50

100

V

-50

-50

300

-0.2

-1

V

V

V

nA

nA

V

V

MHz

Output capacitance

IE = 0, VCB = -10V, f = 1MHz

Cobo

6.0

pF

-0.5

-1

IC = -50mA, IB = -5mA

IC = -50mA, IB = -5mA

300

Rating and Characteristic Curves (AMMBT5401-HF)

AQW-JTR06

Fig.2 - Collector-Emitter Saturation

Voltage vs Collector Current

Collector Current, IC (mA)

0.1

100

1

10

0.2

0.3

0.4

Fig.1 - Typical Pulsed Current Gain

vs Collector Current

Collector Current, IC (A)

0.0001

0

0.01

0.1

1

50

150

0.001

200

100

-40°C

VCE=5V

125°C

25°C

0

0.1

β=10

-40°C

125°C

25°C