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AP50N03BF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP50N03BF
Description  30V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP50N03BF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP50N03BF
30V N-Channel Enhancement Mode MOSFET
AP50N03BF RVE1.0
永源微電子科技有限公司
Description
The AP50N03BF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS=30V ID =50A
RDS(ON) < 10mΩ @ VGS=10V
（Type：8.0mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP50N03BF
QFN2*2-6L
AP50N03BF XXXX YYYY
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1
50
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1
12
A
IDM
Pulsed Drain Current2
112
A
EAS
Single Pulse Avalanche Energy3
24.2
mJ
IAS
Avalanche Current
10
A
PD@TC=25
℃
Total Power Dissipation
37.5
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
RθJA
Thermal Resistance Junction-Ambient 1
125
℃/W
RθJC
Thermal Resistance Junction-Case1
4
℃/W


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