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2SC2655 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC2655 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  NPN Power Transistor 2SC2655 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 50V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):0.5V(Max) @IC=1A · Complementary to 2SA1020 APPLICATIONS · Power Amplifier Applications · Power Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A PC Total Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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