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IXTH48P20P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTH48P20P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc P-Channel MOSFET Transistor IXTH48P20P www.iscsemi.com 1 FEATURES · Drain Current -ID= -48A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Drain-Source Saturation Voltage -VDS(on) = 85mΩ(Max)@VGS= -10V, ID= -24A DESCRIPTION · High breakdown voltage · High forward transfer admittance ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -200 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous -48 A PD Total Dissipation 462 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER TYP UNIT Rth j-c Thermal Resistance, Junction to Case 0.21 ℃ /W |
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