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IPB042N03L Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IPB042N03L Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc N-Channel MOSFET Transistor IPB042N03L www.iscsemi.com V2.0 1 FEATURES · Drain Current -ID= 70A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V APPLICATIONS · Synchronous rectification · Industrial DC-DC converters · Telecom & server power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 70 A IDM Drain Current-Pulsed 400 A PD Total Dissipation 79 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.9 ℃ /W |
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