T0510MH datasheet(2/5 Pages) STMICROELECTRONICS

2 / 5 page

PG (AV)=1 W PGM =10 W (tp = 20

µs)

IGM =4 A (tp =20

µs)

GATE CHARACTERISTICS (maximum values)

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient

°C/W

Rth(j-c)

Junction to case for D.C

5.3

°C/W

Rth(j-c)

Junction to case for A.C 360

° conduction angle (F=50Hz)

°C/W

THERMAL RESISTANCES

Symbol

Test Conditions

Quadrant

Sensitivity

Unit

IGT

VD=12V (DC) RL=33

Ω

Tj= 25

°C

I-II-III-IV

MAX

VGT

VD=12V (DC) RL=33

Ω

Tj= 25

°C

I-II-III-IV

MAX

1.5

VGD

VD=VDRM RL=3.3k

Ω

Tj= 125

°C I-II-III-IV

MIN

0.2

tgt

VD=VDRM

IG = 500mA

IT =7.1A

dIG/dt = 3A/

µs

Tj= 25

°C

I-II-III-IV

TYP

µs

IH *

IT= 250 mA Gate open

Tj= 25

°C

MAX

IG=1.2 IGT

Tj= 25

°C

I-III-IV

TYP

100

VTM *

ITM= 7.1A tp= 380

µs

Tj= 25

°C

MAX

1.65

IDRM

IRRM

VD =VDRM

VR =VRRM

Tj= 25

°C

MAX

µA

Tj= 110

°C

MAX

1.5

dV/dt *

VD=67%VDRM

Gate open

Tj= 110

°C

MIN

100

200

µs

(dV/dt)c *

(dI/dt)c = 2.2 A/ms

Tj= 110

°C

MIN

µs

* For either polarity of electrode A2 voltage with reference to electrode A1

ELECTRICAL CHARACTERISTICS

ORDERING INFORMATION

T0510

TRIAC MESA GLASS

CURRENT

PACKAGE :

H = TO220 Non-insulated

VOLTAGE

SENSITIVITY

T0510xH / T0512xH

2/5

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