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SDR10MSMSTX Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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SDR10MSMSTX Datasheet(HTML) 2 Page - Solid States Devices, Inc |
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2 / 2 page ![]() Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR10D thru SDR10M and SDR10DSMS thru SDR10MSMS Series ELECTRICAL CHARACTERISTICS 3/ CHARACTERISTICS SYMBOL VALUE UNIT MAX Instantaneous Forward Voltage Drop IF = 10.0 Adc, 300-500μs pulse TA = +25°C TA = -55°C VF1 VF2 1.25 1.40 Vdc Reverse Leakage Current Rated VR, 300μs pulse minimum TA = +25°C TA =+100°C IR1 IR2 5 200 μA Junction Capacitance VR = 10 Vdc, f = 1MHz, TA = 25°C CJ 80 pF Reverse Recovery Time IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C trr 5 µs Package Outlines: DIMENSIONS (inches) DIMENSIONS (inches) DIM. Minimum Maximum DIM. Minimum Maximum A --- .170 A .170 .180 B .210 .250 B .260 .300 C .037 .043 C .020 .030 D 1.000 --- D .002 --- AXIAL SMS NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: R00001C DOC |
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