STP7NE10 datasheet(2/5 Pages) STMICROELECTRONICS

2 / 5 page

THERMAL DATA

Rthj-case

Rthj-amb

Rthc-sink

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

3.33

100

1.5

275

oC/W

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25

oC, I

D = IAR, VDD = 30 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250

µA

VGS = 0

100

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

Tc = 100

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS =

± 20 V

± 100

ON (

∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold

Voltage

VDS = VGS

ID = 250

µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V ID = 3.5 A

0.32

0.4

Ω

ID(on)

On State Drain Current VDS > ID(on) x RDS(on)max

VGS = 10 V

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (

∗)

Forward

Transconductance

VDS > ID(on) x RDS(on)max

ID =2.5 A

2.5

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25 V

f = 1 MHz

VGS = 0

305

STP7NE10

2/5

STP7NE10 Datasheet(PDF) 2 Page - STMicroelectronics

STP7NE10 Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5

Datasheet Download

Link URL